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HP147TSW fiches techniques PDF

SHANTOU HUASHAN ELECTRONIC DEVICES - PNP SILICON TRANSISTOR

Numéro de référence HP147TSW
Description PNP SILICON TRANSISTOR
Fabricant SHANTOU HUASHAN ELECTRONIC DEVICES 
Logo SHANTOU HUASHAN ELECTRONIC DEVICES 





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HP147TSW fiche technique
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Shantou Huashan Electronic Devices Co.,Ltd.
APPLICATIONS
High DC Current Gain
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
PC Collector Dissipation Tc=25
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current DC
IB Base Current
55~150
150
70W
-100V
-100V
-5V
-8A
-0.5A
PNP DARLINGTON TRANSISTOR
HP147TSW
TO-263
1 Base B
2 Collector C
3 Emitter, E
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ
BVCEO(SUS)
ICEO
ICBO
IEBO
HFE 1
HFE 2
VCE(sat1)
VCE(sat2)
VBE(sat)
VBE(on)
tD
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Base- Emitter On Vo ltage
Deiay time
tR Rise Time
tS Storage Time
tF Fall Time
Max Unit
Test Conditions
IC=-30mA, IB=0
VCE=-50V, IB=0
VCB=-100V, IE=0
VEB=-5V, IC=0
VCE=-4V, IC=-0.5A
VCE=-4V, IC=-3A
IC=-5A, IB=-10mA
IC=-10A, IB=-40mA
IC=-10A, IB=-40mA
VCE=-4V,IC=-10A,
Vcc=-30V,Ic=-5A
IB1=-20mA
IB2=20mA

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HP147TS PNP SILICON TRANSISTOR SHANTOU HUASHAN ELECTRONIC DEVICES
SHANTOU HUASHAN ELECTRONIC DEVICES
HP147TSW PNP SILICON TRANSISTOR SHANTOU HUASHAN ELECTRONIC DEVICES
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