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Panasonic Semiconductor - Silicon NPN epitaxial planar type

Numéro de référence 2SD0946A
Description Silicon NPN epitaxial planar type
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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2SD0946A fiche technique
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Power Transistors
2SD0946 (2SD946), 2SD0946A (2SD946A),
2SD0946B (2SD946B)
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
Features
Forward current transfer ratio hFE is designed high, which is appro-
priate to the driver circuit of motors and printer hammer.
A shunt resistor is omitted from the driver.
8.0+–00..15
φ 3.16±0.1
Unit: mm
3.2±0.2
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage
(Emitter open)
2SD0946 VCBO
2SD0946A
2SD0946B
Collector-emitter voltage 2SD0946 VCEO
(Base open)
2SD0946A
2SD0946B
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
30
60
100
25
50
80
5
1
1.5
1.2
150
55 to +150
Electrical Characteristics Ta = 25°C ± 3°C
V
V
V
A
A
W
°C
°C
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
123
0.5±0.1
1.76±0.1
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Internal Connection
B
C
200 E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage
(Emitter open)
2SD0946 VCBO
2SD0946A
IC = 100 µA, IE = 0
30
60
V
2SD0946B
100
Collector-emitter voltage
(Base open)
2SD1263 VCEO
2SD0946A
IC = 1 mA, IB = 0
25 V
50
2SD0946B
80
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1, 2
Collector-emitter saturation voltage *1
Base-emitter saturation voltage *1
Transition frequency
VEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
IE = 100 µA, IC = 0
VCB = 25 V, IE = 0
VEB = 4 V, IC = 0
VCE = 10 V, IC = 1 A
IC = 1 A, IB = 1 mA
IC = 1 A, IB = 1 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
5
4 000
0.1
0.1
40 000
1.8
2.2
150
V
µA
µA
V
V
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE 4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Note) The part numbers in the parenthesis show conventional part number.
Publication date: May 2003
SJD00164BED
1

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