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Numéro de référence | 2SD0965 | ||
Description | Silicon NPN epitaxial planar type | ||
Fabricant | Panasonic Semiconductor | ||
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Transistors
2SD0965 (2SD965)
Silicon NPN epitaxial planar type
For low-frequency power amplification
For stroboscope
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory operation performances at high efficiency with the low-
voltage power supply.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
40
20
7
5
8
750
150
−55 to +150
Unit
V
V
V
A
A
mW
°C
°C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
20 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V
Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0
1 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0
0.1 µA
Forward current transfer ratio
hFE1 * VCE = 2 V, IC = 0.5 A
230 600
hFE2 VCE = 2 V, IC = 1 A
150
Collector-emitter saturation voltage
VCE(sat) IC = 3 A, IB = 0.1 A
0.28 1.00
V
Transition frequency
fT VCB = 6 V, IE = −50 mA, f = 200 MHz 150 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 20 V, IE = 0, f = 1 MHz
26 50
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE1 230 to 380 340 to 600
Publication date: January 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00200BED
1
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Pages | Pages 3 | ||
Télécharger | [ 2SD0965 ] |
No | Description détaillée | Fabricant |
2SD0965 | Silicon NPN epitaxial planar type | Panasonic Semiconductor |
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