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PDF AON7407 Data sheet ( Hoja de datos )
| Número de pieza | AON7407 | |
| Descripción | 20V P-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AON7407
20V P-Channel MOSFET
General Description
Product Summary
The AON7407 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=-4.5V)
RDS(ON) (at VGS =-4.5V)
RDS(ON) (at VGS =-2.5V)
RDS(ON) (at VGS =-1.8V)
100% UIS Tested
100% Rg Tested
-20V
-40A
< 9.5mΩ
< 12.5mΩ
< 18mΩ
DFN 3x3_EP
Top View
Bottom View
Pin 1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-20
±8
-40
-29
-100
-14.5
-11.5
-40
80
29
12
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
60
3.5
Max
40
75
4.2
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: June 2011
www.aosmd.com
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
AON7407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
40
TA=25°C
100
TA=150°C
TA=100°C
TA=125°C
30
20
10
10
1
10 100 1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
50 10000
TA=25°
40 C
1000
30 17
5
100 2
20 10
10 10
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=75°C/W
10
0.00001
0.001
0.1
Pulse Width (s)
1108
Figure 15: Single Pulse Power Rating
Junction-to-Ambient (Note H)
1000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single
pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
Rev 0: June 2011
www.aosmd.com
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AON7407.PDF ] | |
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