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PDF AON7430 Data sheet ( Hoja de datos )

Número de pieza AON7430
Descripción 30V N-Channel MOSFET
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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AON7430
30V N-Channel MOSFET
General Description
Features
The AON7430 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and
general purpose applications.
VDS (V) = 30V
ID = 34A
RDS(ON) < 12m
RDS(ON) < 16m
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
Top View
Bottom
Pin 1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain TA=25°C
Current A
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
34
21
80
13
10.2
22
24
23
9
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
60
4.5
Max
40
75
5.4
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 3: Feb 2010
www.aosmd.com
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AON7430 pdf
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AON7430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 30
TA=25°C
TA=150°C
TA=100°C
TA=125°C
25
20
15
10
5
10
1
10 100 1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
40
35
30
25
20
15
10
5
0
0
10
1
10000
1000
100
10
TA=25°C
17
5
2
10
25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
1
0.00001 0.001
0.1
10 0 1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 3: Feb 2010
www.aosmd.com
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