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PDF AON7460 Data sheet ( Hoja de datos )
| Número de pieza | AON7460 | |
| Descripción | 300V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AON7460 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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AON7460
300V,4A N-Channel MOSFET
General Description
Product Summary
The AON7460 is fabricated using an advanced high voltage
MOSFET process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability this device can be adopted
quickly into new and existing offline power supply
designs.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
350V@150℃
4A
< 0.83Ω
DFN 3x3A_EP
Top View
Bottom View
Pin 1
Top View
SD
SD
SD
GD
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
CurrentB
Pulsed Drain Current C
TC=25°C
TC=100°C
ID
IDM
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy C
Single pulsed avalanche energy G
Peak diode recovery dv/dt
IDSM
IAR
EAR
EAS
dv/dt
Power Dissipation B
TC=25°C
TC=100°C
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Maximum
300
±30
4
2.5
13
1.2
1.0
2.1
66
132
5
33
13
3.1
2
-50 to 150
Typ Max
30 40
60 75
3.1 3.7
D
S
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Mar 2011
www.aosmd.com
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
AON7460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40 5.0
30
20
10
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 12: Power De-rating (Note B)
4.0
3.0
2.0
1.0
0.0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
100
80
60
40
20
0
0.0001
TJ(Max)=150°C
TA=25°C
0.001
0.01 0.1
1
Pulse Width (s)
10
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
100
1000
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
PD
Single Pulse
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
100
1000
Rev 0: Mar 2011
www.aosmd.com
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AON7460.PDF ] | |
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