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S9014 fiches techniques PDF

SeCoS Halbleitertechnologie GmbH - Low Level & Low Noise

Numéro de référence S9014
Description Low Level & Low Noise
Fabricant SeCoS Halbleitertechnologie GmbH 
Logo SeCoS Halbleitertechnologie GmbH 





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S9014 fiche technique
www.DataSheet.co.kr
Elektronische Bauelemente
S9014
NPN Silicon
Pre-Amplifier, Low Level & Low Noise
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Collector
33
Power dissipation
PCM : 0.2 W
Collector Current
ICM : 0.1 A
Collector-base voltage
V(BR)CBO : 50 V
Operating & storage junction temperature
Tj, Tstg : - 55OC ~ + 150OC
V
1
2
A
L
3
Top View
12
G
1
Base
BS
2
Emitter
C
D
H
K
J
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
Ic= 100μAIE=0
Ic= 0.1mAIB=0
IE=100μAIC=0
VCB=50 V , IE=0
VCE=35V , IB=0
VEB= 3V , IC=0
50
45
5
V
V
V
0.1 μA
0.1 μA
0.1 μA
DC current gain
hFE VCE=5V, IC= 1mA 200
1000
Collector-emitter saturation voltage
VCE(sat) IC=100 mA, IB= 5mA
0.3 V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC=100 mA, IB= 5mA
VCE=5V, IC= 10mA
f=30MHz
150
1V
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
L
200-450
H
450-1000
DEVICE MARKING: S9014 =J6
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
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