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Numéro de référence | 2SC1162 | ||
Description | Silicon NPN Epitaxial | ||
Fabricant | Hitachi Semiconductor | ||
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1 Page
2SC1162
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SA715
Outline
TO-126 MOD
123
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC
PC * 1
Tj
Tstg
1. Emitter
2. Collector
3. Base
Ratings
35
35
5
2.5
3
0.75
10
150
–55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
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Pages | Pages 5 | ||
Télécharger | [ 2SC1162 ] |
No | Description détaillée | Fabricant |
2SC1161 | SILICON POWER TRANSISTOR | SavantIC |
2SC1162 | Silicon NPN Epitaxial | Hitachi Semiconductor |
2SC1162 | SILICON POWER TRANSISTOR | SavantIC |
2SC1162 | NPN Plastic Encapsulated Transistor | SeCoS |
US18650VTC5A | Lithium-Ion Battery | Sony |
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