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PDF ATP216 Data sheet ( Hoja de datos )
| Número de pieza | ATP216 | |
| Descripción | N-Channel Silicon MOSFET | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number : EN8985
ATP216
SANYO Semiconductors
DATA SHEET
ATP216
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• ON-resistance RDS(on)1=17mΩ(typ.)
• 1.8V drive
• Slim package
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=10V, L=100μH, IAV=18A
*2 L≤100μH, Single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
50
±10
35
105
40
150
--55 to +150
40
17.5
Unit
V
V
A
A
W
°C
°C
mJ
A
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP216
LOT No.
TL
2
1
0.8
3
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
Electrical Connection
2,4
1
3
http://semicon.sanyo.com/en/network
51111PA TKIM TC-00002591 No.8985-1/4
Datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet ATP216.PDF ] | |
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