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Número de pieza | 2SC1846 | |
Descripción | Silicon NPN epitaxial planar type | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC1846 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Power Transistors
2SC1846
Silicon NPN epitaxial planar type
For medium output power amplification
Complementary to 2SA0885
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Output of 3 W can be obtained by a complementary pair with
2SA0885
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
VCBO
VCEO
VEBO
IC
ICP
PC
45
35
5
1
1.5
1.2
5.0 *
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
Note) *: With a 100 × 100 × 2 mm Al heat sink
Unit
V
V
V
A
A
W
°C
°C
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCBO
VCEO
ICBO
ICEO
IEBO
hFE1 *
hFE2
VCE(sat)
fT
Cob
IC = 1 mA, IE = 0
IC = 2 mA, IB = 0
VCB = 20 V, IE = 0
VCE = 20 V, IB = 0
VEB = 5 V, IC = 0
VCE = 10 V, IC = 500 mA
VCE = 5 V, IC = 1 A
IC = 500 mA, IB = 50 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
45
35
85
50
0.1
100
10
340
0.5
200
20
V
V
µA
µA
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240 170 to 340
Publication date: February 2003
SJD00094BED
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2SC1846.PDF ] |
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