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GT100DA120U fiches techniques PDF

Vishay Siliconix - Insulated Gate Bipolar Transistor

Numéro de référence GT100DA120U
Description Insulated Gate Bipolar Transistor
Fabricant Vishay Siliconix 
Logo Vishay Siliconix 





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GT100DA120U fiche technique
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GT100DA120U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 100 A, 25 °C
1200 V
100 A at 119 °C
1.73 V
FEATURES
• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 10 μs short circuit capability
• HEXFRED® antiparallel diodes with ultrasoft reverse
recovery
• TJ maximum = 150 °C
• Fully isolated package
• Very low internal inductance (5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Speed 4 kHz to 30 kHz
• Very low VCE(on)
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
Isolation voltage
VCES
IC (1)
ICM
ILM
IF
IFSM
VGE
PD
PD
VISOL
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 119 °C
TC = 25 °C
TC = 119 °C
Any terminal to case, t = 1 min
1200
258
174
450
450
50
34
180
± 20
893
221
176
44
2500
Note
(1) Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals
UNITS
V
A
V
W
V
Document Number: 93196 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
1
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