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PDF 2SC2206 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2206 | |
| Descripción | Silicon NPN epitaxial planer type(For high-frequency amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SC2206
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1254
s Features
q Optimum for RF amplification of FM/AM radios.
q High transition frequency fT.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
CEBO
IC
PC
Tj
Tstg
Ratings
30
20
5
30
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to base voltage
VCBO
IC = 10µA, IE = 0
30
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCB = 10V, IE = –1mA
20 V
5V
70 220
Collector to emitter saturation voltage VCE(sat)
IC = 10mA, IB = 1mA
0.1 V
Base to emitter voltage
VBE VCE = 10V, IC = 1mA
0.7 V
Transition frequency
fT
VCB = 10V, IE = –1mA, f = 200MHz 150
300
MHz
Noise figure
NF VCB = 10V, IE = –1mA, f = 5MHz
2.8 4 dB
Common emitter reverse transfer capacitance Cre
Reverse transfer impedance
Zrb
VCE = 10V, IC = 1mA, f = 10.7MHz
VCB = 10V, IE = –1mA, f = 2MHz
1.5 pF
50 Ω
*hFE Rank classification
Rank
B
hFE 70 ~ 140
C
110 ~ 220
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC2206.PDF ] | |
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