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Sanyo Semicon Device - N-channel Silicon Junction FET

Numéro de référence TF208TH
Description N-channel Silicon Junction FET
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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TF208TH fiche technique
www.DataSheet.co.kr
Ordering number : ENN7698A
TF208TH
TF208TH
N-channel Silicon Junction FET
Electret Condenser Microphone
Applications
Features
Ultrasmall package facilitates miniaturization in end products.
Especially suited for use in electret condenser microphone for audio equipments and telephones.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Conditions
Electrical Characteristics at Ta=25°C (Value per element)
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDO IG=--100µA
Cutoff Voltage
VGS(off) VDS=2V, ID=1µA
Zero-Gate Voltage Drain Current
IDSS
VDS=2V, VGS=0V
Forward Transfer Admittance
yfs
VDS=2V, VGS=0V, f=1kHz
Input Capacitance
Ciss
VDS=2V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
Crss
VDS=2V, VGS=0V, f=1MHz
[Ta=25˚C, VCC=2.0V, RL=2.2k, Cin=5pF, See specified Test Circuit.]
Voltage Gain
GV VIN=10mV, f=1kHz
Reduced Voltage Characteristic
GVV
VIN=10mV, f=1kHz, VCC=2.01.5V
Frequency Characteristic
GVf
f=1kHz to 110Hz
* : The TF208TH is classified by IDSS as follows : (unit : µA)
Rank
B4
B5
IDSS
140 to 240
210 to 350
Ratings
--20
10
1
100
150
--55 to +150
Unit
V
mA
mA
mW
°C
°C
min
--20
--0.1
140*
0.5
Ratings
typ
1.4
5.0
1.1
max
--1.0
350*
Unit
V
V
µA
mS
pF
pF
--2.0 dB
--0.6 --2.0 dB
--1.0 dB
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81005GB MS IM / 33004 TS IM TA-100955 No.7698-1/4
Datasheet pdf - http://www.DataSheet4U.net/

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