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Numéro de référence | BU103A | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
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www.DataSheet.co.kr
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU103A
DESCRIPTION
·Continuous Collector Current-IC= 1A
·Collector Power Dissipation-
: PC= 30W @TC= 25℃
APPLICATIONS
·Designed for TV vertical applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
120 V
VCER
Collector-Emitter Voltage RBE= 220Ω
120
V
VEBO
Emitter-Base Voltage
8V
IC Collector Current-Continuous
1A
PC Collector Power Dissipation@TC=25℃ 30
W
TJ Junction Temperature
200 ℃
Tstg Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
6.0 ℃/W
isc Website:www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/
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Pages | Pages 2 | ||
Télécharger | [ BU103A ] |
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