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Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence BU103A
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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BU103A fiche technique
www.DataSheet.co.kr
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU103A
DESCRIPTION
·Continuous Collector Current-IC= 1A
·Collector Power Dissipation-
: PC= 30W @TC= 25
APPLICATIONS
·Designed for TV vertical applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
120 V
VCER
Collector-Emitter Voltage RBE= 220Ω
120
V
VEBO
Emitter-Base Voltage
8V
IC Collector Current-Continuous
1A
PC Collector Power Dissipation@TC=2530
W
TJ Junction Temperature
200
Tstg Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
6.0 /W
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/

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