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PDF GB15XP120KTPBF Data sheet ( Hoja de datos )
| Número de pieza | GB15XP120KTPBF | |
| Descripción | Three Phase Inverter Module | |
| Fabricantes | Vishay Siliconix | |
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GB15XP120KTPbF
Vishay Semiconductors
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED® Diodes, 15 A
MTP
PRODUCT SUMMARY
VCES
VCE(on) typical at VGE = 15 V
IC at TC = 100 °C
tsc at TJ = 150 °C
1200 V
2.51 V
15 A
> 10 μs
FEATURES
• Generation 5 NPT 1200 V IGBT technology
• HEXFRED® diode with ultrasoft reverse
recovery
• Very low conduction and switching losses
• Optional SMT thermistor (NTC)
• Aluminum oxide DBC
• Very low stray inductance design for high speed operation
• Short circuit 10 μs
• Square RBSOA
• Operating frequencies 8 kHz to 60 kHz
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for inverter motor drive applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
(including diode and IGBT)
ICM
ILM
IF
IFM
VGE
VISOL
PD
TEST CONDITIONS
TC = 25 °C
TC = 100 °C
TC = 100 °C
Any terminal to case, t = 1 min
TC = 25 °C
TC = 100 °C
MAX.
1200
30
15
60
60
15
30
± 20
2500
187
75
UNITS
V
A
V
W
Document Number: 93913 For technical questions within your region, please contact one of the following:
Revision: 03-Aug-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
GB15XP120KTPbF
Three Phase Inverter Module in MTP Package Vishay Semiconductors
1200 V NPT IGBT and HEXFRED® Diodes, 15 A
10000
120
1000
Cies
Coes
100
Cres
10
0
10 20
Vce (V)
30
40
Fig. 9 - Typical Capacitance vs. VCE
VGE = 0 V; f = 1 MHz
16
600V
12
8
4
0
0 20 40 60 80 100
QG, Total Gate Charge (nC)
Fig. 10 - Typical Gate Charge vs. VGE
ICE = 15 A
32
90
60
30
0
0 40 80 120 160
Tc (°C)
Fig. 12 - Power Dissipation vs. Case Temperature
(IGBT only)
100
10
1
0.1
0.01
1
100
20 µs
100 µs
1 ms
10 ms
DC
10 100 1000
Vce (V)
Fig. 13 - Forward SOA
TC = 25 °C, TJ 150 °C
10000
24
16 10
8
0
0 40 80 120 160
Tc (°C)
Fig. 11 - Maximum DC Collector Current vs.
Case Temperature
1
10
100
1000
10000
Vce (V)
Fig. 14 - Reverse BIAS SOA
TJ = 150 °C, VGE = 15 V
Document Number: 93913 For technical questions within your region, please contact one of the following:
Revision: 03-Aug-10
www.vishay.com
5
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5 Page | ||
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