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PDF RD100HHF1 Data sheet ( Hoja de datos )
| Número de pieza | RD100HHF1 | |
| Descripción | MOS FET | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
DESCRIPTION
RD100HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
FEATURES
•High power and High Gain:
Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
•High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
OUTLINE DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
4-C2
3
5.0+/-0.3
18.5+/-0.3
2
R1.6+/-0.15
0.1
+0.05
-0.01
4.5+/-0.7
6.2+/-0.7
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage Vgs=0V
VGSS
Gate to source voltage
Vds=0V
Pch Channel dissipation
Tc=25°C
Pin Input power
Zg=Zl=50Ω
ID Drain current
-
Tch Channel temperature
-
Tstg Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
RATINGS
50
+/-20
176.5
12.5
25
175
-40 to +175
0.85
UNIT
V
V
W
W
A
°C
°C
°C/W
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
ELECTRICAL CHARACTERISTICS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zerogate voltage drain current VDS=17V, VGS=0V
- - 10
IGSS Gate to source leak current VGS=10V, VDS=0V
--1
VTH Gate threshold voltage
VDS=12V, IDS=1mA
1.5 - 4.5
Pout Output power
f=30MHz ,VDD=12.5V
100 110
-
ηD Drain efficiency
Pin=7W, Idq=1.0A
55 60
-
Load VSWR tolerance
VDD=15.2V,Po=100W(Pin Control)
f=30MHz,Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD100HHF1
MITSUBISHI ELECTRIC
1/7
REV.3 8 APRIL. 2004
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=30MHz Zout
f=30MHz Zin
Zo=10Ω
Zin , Zout
f
(MHz)
30
Zin
(ohm)
8.86-j14.31
Zout
(ohm)
0.64-j0.01
Conditions
Po=115W, Vdd=12.5V,Pin=7W
RD100HHF1
MITSUBISHI ELECTRIC
5/7
REV.3 8 APRIL. 2004
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
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| PDF Descargar | [ Datasheet RD100HHF1.PDF ] | |
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