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Numéro de référence | D5011 | ||
Description | NPN Transistor - 2SD5011 | ||
Fabricant | Inchange Semiconductor | ||
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www.DataSheet.co.kr
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD5011
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
·Built-in Damper Diode
APPLICATIONS
·Designed for color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current- Continuous
3.5
A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
10 A
50 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/
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Pages | Pages 2 | ||
Télécharger | [ D5011 ] |
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