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Inchange Semiconductor - NPN Transistor - 2SD5011

Numéro de référence D5011
Description NPN Transistor - 2SD5011
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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D5011 fiche technique
www.DataSheet.co.kr
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD5011
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
·Built-in Damper Diode
APPLICATIONS
·Designed for color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current- Continuous
3.5
A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
10 A
50 W
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/

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