DataSheetWiki


V30100SG fiches techniques PDF

Vishay - High-Voltage Trench MOS Barrier Schottky Rectifier

Numéro de référence V30100SG
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Fabricant Vishay 
Logo Vishay 





1 Page

No Preview Available !





V30100SG fiche technique
www.DataSheet.co.kr
New Product
V30100SG, VF30100SG, VB30100SG & VI30100SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.437 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V30100SG
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF30100SG
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
A
NC
VB30100SG
NC K
A HEATSINK
3
2
1
VI30100SG
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 30 A
TJ max.
30 A
100 V
250 A
0.76 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V30100SG VF30100SG VB30100SG VI30100SG
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV)
IFSM
100
30
250
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min
VAC
1500
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
UNIT
V
A
A
V
°C
Document Number: 88996 For technical questions within your region, please contact one of the following:
Revision: 31-Jul-08
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/

PagesPages 5
Télécharger [ V30100SG ]


Fiche technique recommandé

No Description détaillée Fabricant
V30100S High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay
V30100SG High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche