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2SC3090 fiches techniques PDF

Sanyo Semicon Device - NPN Triple Diffused Planar Silicon Transistor

Numéro de référence 2SC3090
Description NPN Triple Diffused Planar Silicon Transistor
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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2SC3090 fiche technique
Ordering number:EN1013C
NPN Triple Diffused Planar Silicon Transistor
2SC3090
500V/10A Switching Regulator Applications
Features
· High breakdown voltage (VCBO800V).
· Fast switching speed.
· Wide ASO.
Package Dimensions
unit:mm
2022
[2SC3090]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
PW300µs, duty cycle10%
Tc=25˚C
Switching Time Test Circuit
E : Emitter
C : Collector
B : Base
SANYO : TO-3PB
Ratings
800
500
7
10
20
4
2.5
100
150
–55 to +150
Unit
V
V
V
A
A
W
W
W
˚C
˚C
Unit (resistance : , capacitance : F)
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/D138MO/4207KI/2125MW, TS No.1013-1/4

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