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PDF SQ1431EH Data sheet ( Hoja de datos )
| Número de pieza | SQ1431EH | |
| Descripción | Automotive P-Channel MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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SQ1431EH
Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 4.5 V
ID (A)
Configuration
- 30
0.175
0.300
-3
Single
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
Marking Code
9E XX
Lot Traceability
and Date Code
Part # Code
S
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SC-70
SQ1431EH-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)
IS
Pulsed Drain Currenta
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationa
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
- 30
± 20
-3
- 1.8
- 3.7
- 12
-6
1.8
3
1
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mountb
SYMBOL
RthJA
RthJF
LIMIT
130
50
UNIT
°C/W
S11-2128 Rev. B, 31-Oct-11
1
Document Number: 67048
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
10
100 μs
1 ms
1
10 ms
0.1
0.01
0.01
Limited by RDS(on)*
TC = 25 °C
Single Pulse
BVDSS Limited
0.1 1 10
100 ms
1 s, 10 s
DC
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
SQ1431EH
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 130°C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
S11-2128 Rev. B, 31-Oct-11
5
Document Number: 67048
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
5 Page 
www.DataSheet.co.kr
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
(1.702)
Return to Index
Return to Index
0.016
(0.406)
0.026
(0.648)
0.010
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
www.vishay.com
18
Document Number: 72602
Revision: 21-Jan-08
Datasheet pdf - http://www.DataSheet4U.net/
11 Page | ||
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