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Numéro de référence | SQ3419EEV | ||
Description | Automotive P-Channel MOSFET | ||
Fabricant | Vishay | ||
Logo | |||
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SQ3419EEV
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 4.5 V
ID (A)
Configuration
TSOP-6
Top V iew
- 40
0.050
0.078
- 7.4
Single
(1, 2, 5, 6) D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Typical ESD Protection 800 V
• Compliant to RoHS Directive 2002/95/EC
3 mm
16
25
(3) G
34
2.85 mm
Marking Code: 8Cxxx
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
(4) S
P-Channel MOSFET
TSOP-6
SQ3419EEV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a
IS
Pulsed Drain Current
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
- 40
± 12
- 7.4
- 4.3
- 6.3
- 29
- 20
20
5
1.6
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mountc
SYMBOL
RthJA
RthJF
LIMIT
110
30
UNIT
°C/W
S11-2124-Rev. B, 07-Nov-11
1
Document Number: 66714
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
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Pages | Pages 11 | ||
Télécharger | [ SQ3419EEV ] |
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