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Numéro de référence | R6012FNX | ||
Description | Drive Nch MOSFET | ||
Fabricant | ROHM Semiconductor | ||
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1 Page
Data Sheet
10V Drive Nch MOSFET
R6012FNX
Structure
Silicon N-channel MOSFET
Features
1) Fast reverse recovery time (trr)
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage
VGSS garanteed to be ±30V .
5) Drive circuits can be simple.
6) Parallel use is easy.
Dimensions (Unit : mm)
TO-220FM
10.0 φ3.2
4.5
2.8
1.2
1.3
0.8
2.54 2.54
(1) (2) (3)
0.75
2.6
Application
Switching
Inner circuit
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
R6012FNX
Bulk
-
500
www.DataSheet.co.kr
Absolute maximum ratings (Ta 25°C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche Current
Avalanche Energy
Power dissipation (Tc=25C)
Channel temperature
Range of storage temperature
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
IAS *2
EAS *2
PD
Tch
Tstg
600
30
12
48
12
48
6
9.6
50
150
55 to 150
*1 Pw10s, Duty cycle1%
*2 L≒500H, VDD=50V, Rg=25,starting Tch=25°C
*3 Limited only by maximum temperature allowed.
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
2.5
Unit
C / W
(1) Gate
(2) Drain
(3) Source
∗1
(1) (2) (3)
1 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
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Pages | Pages 7 | ||
Télécharger | [ R6012FNX ] |
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