|
|
Numéro de référence | R6020FNX | ||
Description | Drive Nch MOSFET | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Data Sheet
10V Drive Nch MOSFET
R6020FNX
Structure
Silicon N-channel MOSFET
Features
1) Fast reverse recovery time (trr)
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage
VGSS garanteed to be ±30V .
5) Drive circuits can be simple.
6) Parallel use is easy.
Dimensions (Unit : mm)
TO-220FM
10.0 φ3.2
4.5
2.8
(1) Gate
(2) Drain
(3) Source
1.2
1.3
0.8
2.54 2.54
(1) (2) (3)
0.75
2.6
Application
Switching
Inner circuit
Packaging specifications
Type
Package
Basic ordering unit (pieces)
R6020FNX
Bulk
500
www.DataSheet.co.kr
Absolute maximum ratings (Ta 25°C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche Current
Avalanche Energy
Power dissipation (Tc=25C)
Channel temperature
Range of storage temperature
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
IAS *2
EAS *2
PD
Tch
Tstg
*1 Pw10s, Duty cycle1%
*2 L≒500μH, VDD=50V, RG=25Ω, starting Tch=25°C
*3 Limited only by maximum temperature allowed.
Limits
600
30
20
80
20
80
10
26.7
50
150
55 to 150
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
2.5
Unit
C / W
(1) Gate
(2) Drain
(3) Source
∗1
(1) (2)
1 BODY DIODE
(3)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
|
|||
Pages | Pages 7 | ||
Télécharger | [ R6020FNX ] |
No | Description détaillée | Fabricant |
R6020FNX | Drive Nch MOSFET | ROHM Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |