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PDF R6046FNZ Data sheet ( Hoja de datos )
| Número de pieza | R6046FNZ | |
| Descripción | Drive Nch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
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Data Sheet
10V Drive Nch MOSFET
R6046FNZ
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
Application
Switching
Dimensions (Unit : mm)
TO-3PF
15.5 φ3.6 5.5 3.0
2.0
0.75
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
5.45 5.45
2.0 3.0
0.9
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
R6046FNZ
Bulk
-
360
Inner circuit
∗1
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
IAS *2
EAS *2
PD *4
Tch
Tstg
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25°C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25°C
Limits
600
30
46
115
46
115
23
142
120
150
55 to 150
www.DataSheet.co.kr
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
1.04
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1) (2)
1 BODY DIODE
(3)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
R6046FNZ
Fig.13 Reverse Recovery Time vs. Source Current
1000
Ta=25°C
VGS=0V
di/dt=100A/μs
Pulsed
100
10
0
1 10
Source Current : IS [A]
100
www.DataSheet.co.kr
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet R6046FNZ.PDF ] | |
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