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BH6176GU fiches techniques PDF

ROHM Semiconductor - Silicon Monolithic Integrated Circuit

Numéro de référence BH6176GU
Description Silicon Monolithic Integrated Circuit
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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Structure
Product
Type
Functions
Silicon Monolithic Integrated Circuit
Power Management LSI for MultiMedia LSI on Cellular
BH6176GU
1ch 500mA, high efficiency Step-down Converter. (16 steps adjustable VO by I2C)
・6-channel CMOS-type LDOs. (16 steps adjustable VO by I2C, 150mA×3, 300mA×3)
LDO and Stepdown converter Power ON/OFF control enabled by I2C interface or external pin
I2C compatible Interface. (Device address is “1001111”)
Wafer Level CSP package(2.6mm×2.6mm) for space-constrained applications.
Absolute Maximum RatingsTa=25C
Parameter
Symbol
Rating
Maximum Supply Voltage (VBAT, PBAT)
Maximum Supply Voltage (VUSB)
VBATMAX
VUSBMAX
6.0
6.0
Maximum Supply Voltage (DVDD)
DVDDMAX
4.5
Maximum Input Voltage 1
(LX, FB, OUT1, OUT2, OUT3, OUT4, OUT5, OUT6,
EN_LD1, EN_LD2, EN_LD3, EN_LD4)
Maximum Input Voltage 2
(NRST, CLK, DATA)
Power Dissipation
VINMAX1
VINMAX2
Pd
VBAT + 0.3
DVDD + 0.3
900*1
Operating Temperature Range
Topr -35 +85
Storage Temperature Range
Tstg -55 +125
*1 This is the allowable loss of when it is mounted on a ROHM specification board 60mm×60mm.
To use at temperature higher than 25C , derate 1% per 1C.
Unit
V
V
V
V
V
mW
Recommended Operating Conditions (Ta=25C)
Parameter
www.DataSheet.co.kr
Symbol
Range
Unit
VBAT, PBAT Voltage
VBAT
*2 2.20 5.50
V
VUSB Voltage
VUSB
*2 2.20 5.50
V
DVDD Voltage
VDVDD
*3 1.70 4.20
V
*2 Whenever the VBAT or PBAT or VUSB voltage is under the LDO, SWREG output voltage,
the LDO and SWREG output is not guaranteed to meet its published specifications.
*3 The DVDD Voltage must be under the Battery Voltage VBAT, PBAT at any times.
*This product is not especially designed to be protected from radioactivity.
REV. A
Datasheet pdf - http://www.DataSheet4U.net/

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