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Datasheet NJ301-1200-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
NJ3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | NJ30 | Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier F-14
01/99
NJ30 Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.016" X 0.016" All Roun  INTERFET transistor | | |
| 2 | NJ301-1100 | Machine Automation Controller Machine Automation Controller
NJ-series
Troubleshooting Manual
NJ501-1500 NJ501-1400 NJ501-1300 NJ301-1200 NJ301-1100
www.DataSheet.co.kr
W503-E1-02
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
© OMRON, 2011
All rights reserved. No part of this publication may be reproduced  Omron controller | | |
| 3 | NJ301-1200 | Machine Automation Controller Machine Automation Controller
NJ-series
Troubleshooting Manual
NJ501-1500 NJ501-1400 NJ501-1300 NJ301-1200 NJ301-1100
www.DataSheet.co.kr
W503-E1-02
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
© OMRON, 2011
All rights reserved. No part of this publication may be reproduced Omron controller | | |
| 4 | NJ30L | Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier F-16
01/99
NJ30L Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.016" X 0.016" All Rou  InterFET transistor | | |
| 5 | NJ32 | Silicon Junction Field-Effect Transistor General Purpose Amplifier F-18
01/99
NJ32 Process
Silicon Junction Field-Effect Transistor
¥ General Purpose Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.018" X 0.018" All Bond Pads InterFET transistor | | |
| 6 | NJ3600L | Silicon Junction Field-Effect Transistor Large Capacitance Detector Pre-Amplifier F-48
01/99
NJ3600L Process
Silicon Junction Field-Effect Transistor
¥ Large Capacitance Detector Pre-Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
S-D
S-D
S-D G
Device in this Da InterFET transistor | | |
| 7 | NJ36D | Silicon Junction Field-Effect Transistor F-22
01/99
NJ36D Process
Silicon Junction Field-Effect Transistor
¥ Monolithic Dual Construction ¥ High Frequency Amplifier ¥ Low-Noise Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175° InterFET transistor | |
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