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PDF 2SC4093-T2 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4093-T2 | |
| Descripción | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD | |
| Fabricantes | NEC | |
| Logotipo |  |
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DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC4093
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
The 2SC4093 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteritics, and is
contatined in a 4 pins mini-mold package which enables high-isolation
gain.
FEATURES
• Low Noise
NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gains
S21e2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC4093-T1
3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to perforation side
of the tape.
2SC4093-T2
3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face to perforation
side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4093)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage VCEO
12
Emitter to Base Voltage
VEBO
3.0
Collector Current
IC 100
Total Power Dissipation
PT
200
Junction Temperature
Storage Temperature
Tj 150
Tstg 65 to +150
V
V
V
mA
mW
C
C
PACKAGE DIMENSIONS
(Units: mm)
2.8
+0.2
−0.3
1.5
+0.2
−0.1
5° 5°
5° 5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Document No. P10365EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
© 1991
1 page  
2SC4093
S-PARAMETER
S11e, S22e-FREQUENCY
VCE = 10 V
freq. = 0.2 to 2 GHz (Step 200 MHz)
1
0.6
2
0.2 2.0 GHz
S11e
5
150
180
0
2.0 GHz IC = 20 mA
−0.2
−0.6
S22e
IC = 20 mA
0.2 GHz
0.2 GHz
IC = 5 mA
−5
IC = 5 mA
−2
−1
S21e-FREQUENCY
VCE = 10 V
freq. = 0.2 to 2 GHz (Step 200 MHz)
90
120 60
IC = 20 mA
IC = 5 mA
0.2 GHz
S21e
30 150
S12e-FREQUENCY
VCE = 10 V
freq. = 0.2 to 2 GHz (Step 200 MHz)
90
120 60
S12e
IC = 20 mA
2.0 GHz
30
IC = 5 mA
2.0 GHz
0
2.0 GHz
4 8 12
S21
16 20 0 180
0.2 GHz
0 0.04 0.08 0.12 0.16 0.20
S21
−150
−30 −150
−30
−120
−60
−90
−120
−60
−90
5
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