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Numéro de référence | K3055 | ||
Description | MOSFET ( Transistor ) - 2SK3055 | ||
Fabricant | NEC | ||
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1 Page
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3055
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low On-State Resistance
RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 15 A)
RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 15 A)
• Low Ciss : Ciss = 920 pF TYP.
• Built-in Gate Protection Diode
• Isolated TO-220 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3055
Isolated TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS(AC)
Gate to Source Voltage
VGSS(DC)
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
+20, −10
±30www.DataSheet.co.kr
±100
25
2.0
150
–55 to +150
15
22.5
V
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
5.0
62.5
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13094EJ1V0DS00 (1st edition)
Date Published March 1999 NS CP(K)
Printed in Japan
©
1997,1999
Datasheet pdf - http://www.DataSheet4U.net/
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Pages | Pages 8 | ||
Télécharger | [ K3055 ] |
No | Description détaillée | Fabricant |
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