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NEC - MOSFET ( Transistor ) - 2SK3055

Numéro de référence K3055
Description MOSFET ( Transistor ) - 2SK3055
Fabricant NEC 
Logo NEC 





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K3055 fiche technique
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3055
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low On-State Resistance
RDS(on)1 = 34 mMAX. (VGS = 10 V, ID = 15 A)
RDS(on)2 = 50 mMAX. (VGS = 4.0 V, ID = 15 A)
Low Ciss : Ciss = 920 pF TYP.
Built-in Gate Protection Diode
Isolated TO-220 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3055
Isolated TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS(AC)
Gate to Source Voltage
VGSS(DC)
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
+20, 10
±30www.DataSheet.co.kr
±100
25
2.0
150
–55 to +150
15
22.5
V
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
5.0
62.5
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13094EJ1V0DS00 (1st edition)
Date Published March 1999 NS CP(K)
Printed in Japan
©
1997,1999
Datasheet pdf - http://www.DataSheet4U.net/

PagesPages 8
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