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TriQuint Semiconductor - Active-Bias InGaP HBT Gain Block

Numéro de référence WJA1021
Description Active-Bias InGaP HBT Gain Block
Fabricant TriQuint Semiconductor 
Logo TriQuint Semiconductor 





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WJA1021 fiche technique
WJA1021
+5V Active-Bias InGaP HBT Gain Block
Product Features
50 – 4000 MHz
17.5 dB Gain @ 1.9GHz
+19 dBm P1dB @ 1.9GHz
+36.5 dBm OIP3 @ 1.9GHz
+5V Single Supply
Low current draw (90mA)
Unconditionally stable
Internally matched to 50
Robust 1000V ESD, Class 1C
Lead-free/green/RoHS-compliant
SOT-89 package
Applications
GSM, PCS, CDMA, WCDMA
WiMAX, WiBro
Repeaters, BTS Transceivers
RFID
Product Description
Functional Diagram
The WJA1021 is a cascadable gain block that offers high
linearity in a low-cost surface-mount package. At 1.9 GHz,
the WJA1021 typically provides 17.5 dB gain, +36.5 dBm
OIP3, and +19 dBm P1dB. The device is housed in a lead-
free/green/RoHS-compliant industry-standard SOT-89
SMT package using a NiPdAu plating to eliminate the
possibility of tin whiskering.
The WJA1021 consists of Darlington pair amplifier using a
high reliability InGaP/GaAs HBT process technology.
The amplifier has been optimized internally to offer very
high linearity performance at 1.9 GHz while drawing very
low current. The MMIC amplifier is internally matched to
50Ω and only requires DC-blocking capacitors and a bias
inductor for operation. An internal active bias is designed
to enable stable performance over temperature and allow
for operation directly from a +5V supply voltage.
GND
4
1
RF IN
2
GND
3
RF OUT
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
The broadband amplifier can be directly applied to various
current and next generation wireless technologies such as
GSM, CDMA, W-CDMA, WiBro, and WiMAX. The
WJA1021 is ideal for general purpose applications such as
LO buffering or amplification and pre-driver stages within
the 50 to 4000 MHz frequency range.
Specifications (1)
Typical Performance (3)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Noise Figure
Device Voltage
Device Current
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
Min
50
16.1
+33.5
80
Typ
1900
17.5
-15
-10
+19
+36.5
6.3
5
90.5
Max
4000
19.1
100
1. Test conditions: 25 ºC, Supply Voltage = +5 V, 50 System. S-parameters and 3OIP measured at
device pins. All other specifications measured on evaluation board.
2. 3OIP measured with two tones at an output power of 4 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Parameter
www.DataSheet.net/
Frequency
S21
S11
S22
Output P1dB
Output IP3 (2)
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
200
19.5
-12
-20
+20.2
+36.9
5.3
Typical
900 1900
18.4 16.7
-19 -29
-13 -10
+20.1 +19
+38.9 +36.6
5.6 6.3
3. Listed typical performance parameters measured on evaluation board.
2100
16.4
-25
-10
+18
+36
6.6
Not Recommended For
New Designs
Recommended replacement parts:
TQP3M9008
Absolute Maximum Rating
Parameter
Storage Temperature
Supply Voltage
Thermal Resistance, Rth
Junction Temperature
Input Power
Rating
-55 to +150 °C
+6.5 V
78.8 °C / W
150 °C
+24 dBm
Ordering Information
Part No.
WJA1021
Description
+5V Active Bias InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 Package)
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 1000 pieces on a 7reel
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com
Page 1 of 4 June 2011
Datasheet pdf - http://www.DataSheet4U.co.kr/

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