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RJH1CV6DPK fiches techniques PDF

Renesas - IGBT

Numéro de référence RJH1CV6DPK
Description IGBT
Fabricant Renesas 
Logo Renesas 





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RJH1CV6DPK fiche technique
Preliminary Datasheet
RJH1CV6DPK
1200V - 30A - IGBT
Application: Inverter
R07DS0747EJ0200
Rev.2.00
Jun 12, 2012
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
Built-in fast recovery diode (trr = 180 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 120 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 30 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
12 3
1. Gate
G
2. Collector
3. Emitter
4. Collector
www.DataSheet.net/
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
IDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
1200
30
60
30
90
30
90
290
0.43
0.69
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0747EJ0200 Rev.2.00
Jun 12, 2012
Page 1 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/

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