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Toshiba Semiconductor - MOSFET ( Transistor ) - 2SK3313

Numéro de référence K3313
Description MOSFET ( Transistor ) - 2SK3313
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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K3313 fiche technique
2SK3313
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3313
Chopper Regulator, DCDC Converter Applications
Motor Drive Applications
Unit: mm
l Fast reverse recovery time
: trr = 90 ns (typ.)
l Builtin highspeed freewheeling diode
l Low drainsource ON resistance : RDS (ON) = 0.5 (typ.)
l High forward transfer admittance : |Yfs| = 8.5 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)
l Enhancementmode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
500
500
±30
12
48
40
324
www.DataSheet.net/
12
4.0
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
3.125
62.5
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.83 mH, RG = 25 , IAR = 12 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002-09-02
Datasheet pdf - http://www.DataSheet4U.co.kr/

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