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Numéro de référence | K3313 | ||
Description | MOSFET ( Transistor ) - 2SK3313 | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
1 Page
2SK3313
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3313
Chopper Regulator, DC−DC Converter Applications
Motor Drive Applications
Unit: mm
l Fast reverse recovery time
: trr = 90 ns (typ.)
l Built−in high−speed free−wheeling diode
l Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.)
l High forward transfer admittance : |Yfs| = 8.5 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)
l Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
500
500
±30
12
48
40
324
www.DataSheet.net/
12
4.0
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
—
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
3.125
62.5
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.83 mH, RG = 25 Ω, IAR = 12 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002-09-02
Datasheet pdf - http://www.DataSheet4U.co.kr/
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Pages | Pages 7 | ||
Télécharger | [ K3313 ] |
No | Description détaillée | Fabricant |
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