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NVD5117PL fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NVD5117PL
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
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NVD5117PL fiche technique
NVD5117PL
Power MOSFET
60 V, 16 mW, 61 A, Single PChannel
Features
Low RDS(on) to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AECQ101 Qualified
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain Cur-
rent RqJC (Note 1)
Power Dissipation
(Note 1)
RqJC
Continuous Drain Cur-
rent RqJA (Notes 1 & 2)
Power
(Notes
Dissipation
1 & 2)
RqJA
Pulsed Drain Current
Current Limited by
Package (Note 3)
TC = 25°C
Steady TC = 100°C
State TC = 25°C
TC = 100°C
TA = 25°C
Steady TA = 100°C
State TA = 25°C
TA = 100°C
TA = 25°C, tp = 10 ms
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
IDM
IDmaxpkg
60
"20
61
43
118
59
11
8
4.1
2.1
419
60
V
V
A
W
A
W
A
www.DataSheet.net/
A
Operating Junction and Storage Temperature
TJ, Tstg
55 to
175
°C
Source Current (Body Diode)
IS 118 A
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 40 A, L = 0.3 mH, RG = 25 W)
EAS 240 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoCase Steady State (Drain)
RqJC
1.3 °C/W
JunctiontoAmbient Steady State (Note 2)
RqJA
37
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
60 V
RDS(on)
16 mW @ 10 V
22 mW @ 4.5 V
S
ID
61 A
G
PChannel
D
4
12
3
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y
WW
5117L
G
= Year
= Work Week
= Device Code
= PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
NVD5117PLT4G DPAK
(PbFree)
2500 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
September, 2011 Rev. 0
1
Publication Order Number:
NVD5117PL/D
Datasheet pdf - http://www.DataSheet4U.co.kr/

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