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UT2312 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Unisonic Technologies - 20V N-CHANNEL ENHANCEMENT MODE MOSFET

شماره قطعه UT2312
شرح مفصل 20V N-CHANNEL ENHANCEMENT MODE MOSFET
تولید کننده Unisonic Technologies 
آرم Unisonic Technologies 





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UT2312 شرح
UNISONIC TECHNOLOGIES CO., LTD
UT2312
20V N-CHANNEL
ENHANCEMENT MODE MOSFET
„ DESCRIPTION
The UT2312 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
„ FEATURES
* RDS(ON) = 33 m@VGS = 4.5 V
* RDS(ON) = 40 m@VGS = 2.5 V
* Advanced trench process technology
* Excellent thermal and electrical capabilities
* High density cell design for ultra low on-resistance
„ SYMBOL
3.Drain
Power MOSFET
2.Gate
www.DataSheet.net/
1.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT2312L-AE3-R
UT2312G-AE3-R
Package
SOT-23
Pin Assignment
123
SGD
Packing
Tape Reel
„ MARKING
23N L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-205.D
Datasheet pdf - http://www.DataSheet4U.co.kr/

قانون اساسیصفحه 3
دانلود [ UT2312 دیتاشیت ]




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