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BDW83C fiches techniques PDF

Bourns - NPN SILICON POWER DARLINGTONS

Numéro de référence BDW83C
Description NPN SILICON POWER DARLINGTONS
Fabricant Bourns 
Logo Bourns 





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BDW83C fiche technique
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
Designed for Complementary Use with
BDW84, BDW84A, BDW84B, BDW84C and
BDW84D
150 W at 25°C Case Temperature
15 A Continuous Collector Current
Minimum hFE of 750 at 3V, 6 A
B
C
E
SOT-93 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0) (see Note 1)
Emitter-base voltage
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Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
VCBO
VCEO
VEBO
IC
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TA
45
60
80
100
120
45
60
80
100
120
5
15
0.5
150
3.5
100
-65 to +150
-65 to +150
-65 to +150
V
V
V
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = 20 V.
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
Datasheet pdf - http://www.DataSheet4U.co.kr/

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