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Comset Semiconductors - NPN SILICON POWER DARLINGTONS

Numéro de référence BDW83A
Description NPN SILICON POWER DARLINGTONS
Fabricant Comset Semiconductors 
Logo Comset Semiconductors 





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BDW83A fiche technique
NPN BDW83, BDW83A, BDW83B,
BDW83C, BDW83D,
NPN SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec
TO-218 plastic package.
They are intended for use in power linear and switching applications.
The complementary are BDW84, BDW84A, BDW84B, BDW84C, BDW84D
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
VCEO
VCBO
VEBO
IC
IB
Pt
TJ
TStg
Collector-Emitter Voltage
Collector- Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
IB = 0
www.DataSheet.net/
IE = 0
IC = 0
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
25°C case temperatur
25°C free aire temperatur
45
60
80
100
120
45
60
80
100
120
5
15
0.5
150
3.5
-65 to +150
-65 to +150
Unit
V
V
V
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
RthJA
Junction to Case Thermal Resistance
Junction to Free Air Thermal Resistance
Value
0.83
35.7
Unit
°C/W
23/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/

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