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CDBQR0230R-HF fiches techniques PDF

Comchip - SMD Schottky Barrier Diode

Numéro de référence CDBQR0230R-HF
Description SMD Schottky Barrier Diode
Fabricant Comchip 
Logo Comchip 





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CDBQR0230R-HF fiche technique
SMD Schottky Barrier Diode
CDBQR0230R-HF (RoHS Device)
Io = 200 mA
VR = 30 Volts
SMD Diodes Specialist
Features
Halogen free.
Low reverse current.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 0402(1005) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking code: cathode band & BB
Mounting position: Any.
Weight: 0.001 gram(approx.).
0402(1005)
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
0.012(0.30) Typ.
0.022(0.55)
0.018(0.45)
0.020(0.50) Typ.
Dimensions in inches and (millimeter)
http://www.DataSheet4U.net/
Maximum Rating (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Repetitive peak reverse voltage
VRRM
35 V
Reverse voltage
VR 30 V
Average forward current
Forward current,surge peak
Power Dissipation
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
IO
IFSM
PD
200 mA
1A
125 mW
Storage temperature
TSTG
-40
+125
OC
Junction temperature
Tj
+125
OC
Electrical Characteristics (at TA=25OC unless otherwise noted)
Parameter
Forward voltage
Reverse current
Conditions
IF = 200 mA
VR = 10 V
Symbol Min Typ Max Unit
VF 0.6 V
IR 1 uA
QW-G1097
Comchip Technology CO., LTD.
REV:C
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