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CDBQR42-HF fiches techniques PDF

Comchip - (CDBQR42-HF / CDBQR43-HF) SMD Schottky Barrier Diode

Numéro de référence CDBQR42-HF
Description (CDBQR42-HF / CDBQR43-HF) SMD Schottky Barrier Diode
Fabricant Comchip 
Logo Comchip 





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CDBQR42-HF fiche technique
SMD Schottky Barrier Diode
CDBQR42/43-HF
Io = 200 mA
VR = 30 Volts
RoHS Device
Halogen Free
0402/SOD-923F
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin/leadless package.
-Majority carrier conduction.
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
Mechanical data
-Case: 0402/SOD-923F standard package,
molded plastic.
0.022(0.55)
0.018(0.45)
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
0.012(0.30) Typ.
-Marking code:
CDBQR42-HF : BD
CDBQR43-HF : BE
-Mounting position: Any
0.020(0.50) Typ.
-Weight: 0.001 gram(approx.).
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25OC unless otherwise noted)
Parameter
C o n d i t i o n shttp://www.DataSheet4U.net/
Symbol Min Typ Max Unit
Peak reverse voltage
VRM
30 V
Reverse voltage
VR 30 V
RMS reverse voltage
VR(RMS)
21 V
Average forward rectified current
IO 200 mA
Repetitive peak forward current
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
Power dissipation
Thermal resistance junction
to ambient air
Storage temperature
IFRM
IFSM
PD
R JA
TSTG
-55
0.5 A
4A
125 mW
667 OC/W
+125 OC
Junction temperature
Tj
Electrical Characteristics (at TA=25OC unless otherwise noted)
+125 OC
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage CDBQR42/43-HF
CDBQR42-HF
CDBQR42-HF
CDBQR43-HF
CDBQR43-HF
IF = 200mA
IF = 10mA
IF = 50mA
IF = 2mA
IF = 15mA
Reverse current
VR = 25V
1
0.4
VF 0.65 V
0.33
0.45
IR 0.5 uA
Capacitance between terminals f = 1 MHz, and 1 VDC reverse voltage
CT
10 pF
Reverse recovery time
IF=IR=10mA,Irr=0.1xIR,RL=100 ohm
Trr
5 nS
QW-G1101
Comchip Technology CO., LTD.
REV:B
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