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PDF NJG1152KA1 Data sheet ( Hoja de datos )
| Número de pieza | NJG1152KA1 | |
| Descripción | Wide Band Low Noise Amplifier GaAs MMIC | |
| Fabricantes | New Japan Radio | |
| Logotipo |  |
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NJG1152KA1
Wide Band Low Noise Amplifier GaAs MMIC
I GENERAL DESCRIPTION
The NJG1152KA1 is a fully matched wide band low noise
amplifier GaAs MMIC for digital TV applications.
To achieve wide dynamic range, the NJG1152KA1 offers
high gain mode and low gain mode. Selecting high gain mode
for weak signals, the NJG1152KA1 helps improve receiver
sensitivity through high gain and low noise figure.
Selecting low gain mode for strong signals, it bypasses LNA
circuit to offer higher linearity.
An small and ultra-thin package of FLP6-A1 is adopted.
I PACKAGE OUTLINE
NJG1152KA1
I FEATURES
G Operating frequency
40 to 900MHz
G Package size
FLP6-A1 (Package size: 1.6x1.6x0.55mm typ.)
[ LNA mode, 50 ohm: Operating voltage 3.3V ]
G Operating current
20mA typ.
G Small signal gain
18.0dB typ.
G Noise figure
1.2dB typ. @f=40 to 150MHz
0.9dB typ. @f=150 to 900MHz
[ Bypass mode, 50 ohm: Operating voltage 0V ]
G Insertion loss
1.0dB typ.
G 2nd order intermodulation distortion 75dB typ.
G 3rd order intermodulation distortion
85dB typ.
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I PIN CONFIGURATION
(Top View)
4
RFIN
5
GND
Bias
Circuit
6
VCTL
Logic
Circuit
3
RFOUT2
2
GND
1
RFOUT1
Pin connection
1. RFOUT1
2. GND
3. RFOUT2
4. RFIN
5. GND
6. VCTL
I TRUTH TABLE
VCTL
H
L
1pin Index
“H”=VCTL(H)“L”=VCTL(L)
LNA Bypass
ON
OFF
OFF
ON
Mode select
LNA mode
Bypass mode
Note: Specifications and description listed in this datasheet are subject to change without notice.
Ver.2012-08-17
-1-
datasheet pdf - http://www.DataSheet4U.net/
1 page  
NJG1152KA1
ITERMINAL DESCRIPTION
Pin No. SYMBOL
DESCRIPTION
The RF output terminal of the LNA mode. This terminal doubles as the
1 RFOUT1 drain terminal of the LNA. Please connect this terminal to the power
supply via choke inductor.
2
GND
Ground terminal. This terminal should be connected to the ground
plane as close as possible for excellent RF performance.
The RF output terminal of the Bypass mode. Please connect this
3 RFOUT2 terminal with RFOUT1 terminal through DC blocking capacitor shown
in the application circuit.
4
RFIN
RF input terminal. External capacitor C1 is required to block the DC
bias voltage of internal circuit.
5
GND
Ground terminal. This terminal should be connected to the ground
plane as close as possible for excellent RF performance.
6
VCTL
Control voltage terminal. At this terminal, the switching of the LNA
mode and Bypass mode is possible.
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-5-
datasheet pdf - http://www.DataSheet4U.net/
5 Page 
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (LNA mode, 50 ohm)
Conditions: VDD=3.3V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit
Gain vs. Temperature
(freq=620MHz)
30
NF vs. Temperature
4
25 3
20
15
10
-40
-20
0 20 40 60
Temperature (oC)
80 100
2
40MHz
1
620MHz
0
-40 -20
0 20 40 60
Temperature (oC)
80 100
P-1dB(IN) vs. Temperature
(freq=620MHz)
0
-2
-4
-6
-8
-40
-20
0 20 40 60
Temperature (oC)
80 100
IIP3 vs. Temperature
(f1=620MHz, f2=620.1MHz, Pin=-20dBm)
12
10
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8
6
4
-40 -20
0 20 40 60
Temperature (oC)
80 100
IM2 vs. Temperature
(f1=200MHz, f2=500MHz, fmeas=700MHz, Pin1=Pin2=-15dBm)
80
70
60
50
40
30
20
10
0
-40
-20
0 20 40 60
Temperature (oC)
80 100
IM3 vs. Temperature
(f1=600MHz, f2=650MHz, fmeas=700MHz, Pin1=Pin2=-15dBm)
100
80
60
40
20
0
-40 -20
0 20 40 60
Temperature (oC)
80 100
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