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JS28F512M29EWLx fiches techniques PDF

Numonyx - 3 V supply flash memory

Numéro de référence JS28F512M29EWLx
Description 3 V supply flash memory
Fabricant Numonyx 
Logo Numonyx 





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JS28F512M29EWLx fiche technique
Numonyx™ Axcell™ M29EW
Datasheet
256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit (x8/x16, uniform block)
3 V supply flash memory
Features
„ Supply voltage
— VCC = 2.7 to 3.6 V for Program, Erase and
Read
— VCCQ = 1.65 to 3.6 V for I/O buffers
„ Asynchronous Random/Page Read
— Page size: 16 words or 32 bytes
— Page access: 25 ns
— Random access: 100ns (Fortified BGA);
110 ns (TSOP)
„ Buffer Program
— 512-word program buffer
„ Programming time
— 0.88 µs per byte (1.14MB/s) typical when
using full buffer size in buffer program
„ Memory organization
— Uniform blocks, 128 Kbytes/64 Kwords
each
„ Program/Erase controller
— Embedded byte/word program algorithms
„ Program/ Erase Suspend and Resume
— Read from any block during Program
Suspend
— Read and Program another block during
Erase Suspend
„ Blank Check to verify an erased block
„ Unlock Bypass/Block Erase/Chip Erase/Write
to Buffer
— Faster Buffered/Batch Programming
— Faster Block and Chip Erase
„ Vpp/WP# pin protection
— Protects first or last block regardless of
block protection settings
„ Software protection
— Volatile Protection
— Non-Volatile Protection
— Password Protection
— Password Access
„ Extended Memory block
— 128-word/256-byte block for permanent,
secure identification.
— can be programmed and locked by factory
http://www.DataSheet4U.net/
or by the customer
„ Low power consumption
— Standby
„ Minimum 100,000 Program/Erase cycles per
block
„ ETOXTM* X (65nm) MLC technology
„ Fortified BGA and TSOP packages
„ JESD47E Compliant
„ Green packages available
— RoHS Compliant
— Halogen Free
April 2011
208045-11
1
datasheet pdf - http://www.DataSheet4U.net/

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