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PDF NGTB20N120IHSWG Data sheet ( Hoja de datos )
| Número de pieza | NGTB20N120IHSWG | |
| Descripción | IGBT | |
| Fabricantes | ON Semiconductor | |
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NGTB20N120IHSWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
Features
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Case Temperature in IH Cooker Application
• Low Gate Charge
• These are Pb−Free Devices
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
IC
1200
40
20
V
Ahttp://www.DataSheet4U.net/
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 120 A
IF A
40
20
Diode pulsed
by TJmax
current,
Tpulse
limited
Gate−emitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
IFM
VGE
PD
120
$20
156
62.5
A
V
W
Operating junction temperature
range
TJ −55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
20 A, 1200 V
VCEsat = 2.10 V
Eoff = 0.65 mJ
C
G
E
G
CE
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
20N120IHS
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB20N120IHSWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Publication Order Number:
NGTB20N120IHS/D
datasheet pdf - http://www.DataSheet4U.net/
1 page  
NGTB20N120IHSWG
TYPICAL CHARACTERISTICS
2.0 1000
td(off)
1.6
tf
100
1.2
0.8
0.4
0
5
VCE = 600 V
VGE = 15 V
IC = 20 A
TJ = 150°C
15 25 35 45 55 65 75
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
85
10 VCE = 600 V
VGE = 15 V
IC = 20 A
TJ = 150°C
1
5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 14. Switching Time vs. Rg
2.0 1000
1.6 tf
100 td(off)
1.2
0.8
VGE = 15 V
0.4
IC = 20 A
Rg = 10 W
TJ = 150°C
0
375 425 475 525 575 625 675 725
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
775
10
http://www.DataSheet4U.net/
VGE = 15 V
IC = 20 A
Rg = 10 W
TJ = 150°C
1
375 425 475
525
575
625
675
725 775
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. VCE
1000
IC(max) Pulsed
100
50 ms
10 IC(max) Continuous
100 ms
1 ms
dc operation
1
Single Nonrepetitive
Pulse TC = 25°C
0.1 Curves must be derated
linearly with increase
0.01 in temperature
0.1 1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
1000
100
10
VGE = 15 V, TC = 125°C
1
1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
http://onsemi.com
5
datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
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| PDF Descargar | [ Datasheet NGTB20N120IHSWG.PDF ] | |
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