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BLF2425M7L140 fiches techniques PDF

NXP Semiconductors - Power LDMOS transistor

Numéro de référence BLF2425M7L140
Description Power LDMOS transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BLF2425M7L140 fiche technique
BLF2425M7L140;
BLF2425M7LS140
Power LDMOS transistor
Rev. 3 — 6 September 2012
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz.
The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW
applications and are assembled in high performance ceramic packages, available in
eared and earless versions
Table 1. Typical performance
Typical RF performance at Tcase = 25 C; IDq = 1300 mA in a common source class-AB production
test circuit.
Test signal
f
(MHz)
VDS
PL(AV)
(V) (W)
Gp
(dB)
D
(%)
CW
2450
28 140
18.5 52
1.2 Features and benefits
High efficiency
http://www.DataSheet4U.net/
High power gain
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally matched
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications in the frequency range from 2400 MHz to
2500 MHz
datasheet pdf - http://www.DataSheet4U.net/

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