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KI5515DC fiches techniques PDF

Kexin - Complementary MOSFET

Numéro de référence KI5515DC
Description Complementary MOSFET
Fabricant Kexin 
Logo Kexin 





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KI5515DC fiche technique
SMD Type
Complementary 20-V (D-S) MOSFET
KI5515DC
Features
TrenchFET Power MOSFETS
Ultra Low rDS(on) and Excellent Power
Handling In Compact Footprint
ICIC
Absolute Maximum Ratings TA = 25
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 )* TA = 25
TA = 85
Pulsed Drain Current
Continuous Source Current (Diode Conduction)*
Maximum Power Dissipation*
TA = 25
TA = 85
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
*Surface Mounted on 1" X 1" FR4 Board.
N-Channel
P-Channel
5 secs Steady State 5 secs Steady State
20 -20
8
5.9 4.4 -4.1
-3
4.2 3.1 -2.9 -2.2
20 -15
1.8 0.9 -1.8 -0.9
2.1 1.1 2.1
1.1
1.1 0.6 1.1
0.6
-55 to 150
Unit
V
V
A
A
A
A
W
W
Thermal Resistance Ratings
Parameter
Symbol
Typ
Max
Unit
Maximum Junction-to-Ambient*
t 5 sec
Steady State
RthJA
50
90
60
110
/W
Maximum Junction-to-Case (Drain) Steady State RthJF
30
40
*Surface Mounted on 1" X 1" FR4 Board.
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