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PDF KU045N10P Data sheet ( Hoja de datos )
| Número de pieza | KU045N10P | |
| Descripción | N-ch Trench MOS FET | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converter,
Synchronous Rectification and a load switch in battery powered
applications
FEATURES
VDSS= 100V, ID= 150A
Drain-Source ON Resistance :
RDS(ON)=4.5m (Max.) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance,
Junction-to-Ambient
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
Tj
Tstg
RthJC
RthJA
RATING
100
20
150
94.9
400*
860
8.8
4.5
192
1.54
150
-55 ~ 150
0.65
62.5
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
* : Drain current limited by maximum junction temperature.
Calculated continuous Current based on maximum allowable junction temperature
K
PIN CONNECTION
KU045N10P
N-ch Trench MOS FET
2012. 5. 23
Revision No : 0
1/7
Free Datasheet http://www.datasheet4u.com/
1 page  
KU045N10P
2012. 5. 23
Revision No : 0
5/7
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet KU045N10P.PDF ] | |
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