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PDF P1004BD Data sheet ( Hoja de datos )
| Número de pieza | P1004BD | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Niko-Sem | |
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NIKO-SEM
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 10mΩ
N-Channel Enhancement Mode
P1004BD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
D
ID
55A G
S
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy 2
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 70 °C
L = 0.1mH
TC = 25 °C
TC = 70 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
LIMITS
40
±20
55
44
120
38
73
50
32
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
Junction-to-Case
RθJC
1Pulse width limited by maximum junction temperature.
2VDD = 20V . Starting TJ = 25˚C.
TYPICAL
MAXIMUM
62.5
2.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 32V, VGS = 0V
VDS = 30V, VGS = 0V, TJ = 55 °C
LIMITS
UNIT
MIN TYP MAX
40
1.7 2.0 3.0
V
±100 nA
1
µA
10
REV 1.3
Mar-18-2010
1
Free Datasheet http://www.datasheet4u.com/
1 page  
NIKO-SEM
N-Channel Enhancement Mode
P1004BD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
REV 1.3
Mar-18-2010
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet P1004BD.PDF ] | |
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