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PDF IKA06N60T Data sheet ( Hoja de datos )
| Número de pieza | IKA06N60T | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
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IKA06N60T
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TrenchStop series
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
G
E
- Variable Speed Drive for washing machines, air
conditioners and induction cooking
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
• Low EMI
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-220-3-31
(TO-220 FullPak)
Type
VCE
IC;Tc=100°C VCE(sat),Tj=25°C Tj,max
IKA06N60T 600V
6A
1.5V
175°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 175°C
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time1)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction temperature
Storage temperature
Marking Code
K06T60
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Package
Ordering Code
TO-220-FP Q67040S4678
Value
600
12
6
18
18
Unit
V
A
12
6
18
±20
5
28
-40...+175
-55...+175
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2 Oct-04
Free Datasheet http://www.datasheet4u.com/
1 page  
IKA06N60T
^
TrenchStop series
15A
10A
TC=80°C
TC=110°C
10A
1A
tp=1µs
5µs
10µs
50µs
5A Ic
0A
10Hz
Ic
100Hz
1kHz
10kHz 100kHz
Figure 1.
f, SWITCHING FREQUENCY
Collector current as a function of
switching frequency
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 23Ω)
0,1A
500µs
5ms
DC
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C,
Tj ≤175°C;VGE=15V)
25W
20W
15W
10W
5W
0W25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj ≤ 175°C)
8A
6A
4A
2A
0A
25°C
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
Power Semiconductors
5
Rev. 2 Oct-04
Free Datasheet http://www.datasheet4u.com/
5 Page 
IKA06N60T
^
TrenchStop series
TJ=175°C
8A
6A TJ=25°C
4A
2A
0A
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 6A,
Dynamic test circuit in Figure E)
-500A/µs
-400A/µs
TJ=25°C
-300A/µs
-200A/µs
TJ=175°C
-100A/µs
0A/µs
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR = 400V, IF = 6A,
Dynamic test circuit in Figure E)
10A
8A
6A
4A
TJ=175°C
2A 25°C
0A
0,0V
0,5V
1,0V
1,5V
2,0V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
2,0V IF=12A
1,5V
6A
1,0V
3A
0,5V
0,0V
0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
Power Semiconductors
11
Rev. 2 Oct-04
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
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