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PDF P9006EDG Data sheet ( Hoja de datos )
| Número de pieza | P9006EDG | |
| Descripción | P-Channel Logic Level Enhancement | |
| Fabricantes | Niko-Sem | |
| Logotipo |  |
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NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor (Preliminary)
P9006EDG
TO-252
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90m
ID
-8A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
PD
Tj, Tstg
TL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
-60
±20
-7
-6
-30
28
18
-55 to 150
275
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJc
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
TYPICAL
MAXIMUM
3
75
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
-60
V
-1 -2 -3
IGSS VDS = 0V, VGS = ±20V
±250 nA
VDS = -48V, VGS = 0V
IDSS
VDS = -44V, VGS = 0V, TJ = 125 °C
1
µA
10
ID(ON)
VDS = -5V, VGS = -10V
-32
A
OCT-21-2004
1
Free Datasheet http://www.datasheet4u.com/
1 page  
NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor (Preliminary)
P9006EDG
TO-252
Lead-Free
TO-252 (DPAK) MECHANICAL DATA
mm mm
Dimension
Dimension
Min. Typ. Max.
Min. Typ. Max.
A 9.35
10.4 H 0.89
2.03
B 2.2
2.4 I 6.35
6.80
C 0.45
0.6 J 5.2
5.5
D 0.89
1.5 K 0.6
1
E 0.45
0.69
L
0.5
0.9
F 0.03
0.23
M
3.96
4.57
5.18
G 5.2
6.2 N
A
HG
K
OCT-21-2004
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
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| PDF Descargar | [ Datasheet P9006EDG.PDF ] | |
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