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Numéro de référence | 2SC3052 | ||
Description | TRANSISTOR | ||
Fabricant | Jiangsu Changjiang | ||
Logo | |||
1 Page
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate Transistors
2SC3052
TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
0.15 W (Tamb=25℃)
Collector current
ICM: 0.2 A
Collector-base voltage
V(BR)CBO:
50 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
Ic=100µA, IE=0
Ic= 100µA, IB=0
IE=100µA, IC=0
VCB=50 V , IE=0
VEB= 6V , IC=0
MIN TYP
50
50
6
DC current gain
Collector-emitter saturation voltage
hFE(1)
hFE(2)
VCE(sat)
VCE=6V, IC=1mA
VCE=6V, IC=0.1mA
IC=100 mA, IB=10mA
150
50
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB=10mA
MAX UNIT
V
V
V
0.1 µA
0.1 µA
800
0.3 V
1V
Transition frequency
fT
VCE=6V, IC= 10mA
180
MHz
CLASSIFICATION OF hFE(1)
Marking
Range
LE
150-300
LF
250-500
LG
400-800
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 1 | ||
Télécharger | [ 2SC3052 ] |
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