|
|
Numéro de référence | 2SC3122 | ||
Description | Silicon NPN Epitaxial | ||
Fabricant | Kexin | ||
Logo | |||
1 Page
SMD Type
TransistIoCrs
Silicon NPN Epitaxial
2SC3122
Features
High Gain: Gpe=24dB(Typ.)(f=200MHz)
Low Noise :NF=2.0dB(Typ.)(f=200MHZ)
Excellent Forward AGC Characteristics
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector Power Dissipation
Junction temperature
Storage temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
30
30
3
20
10
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
www.kexin.com.cn 1
Free Datasheet http://www.datasheet4u.com
|
|||
Pages | Pages 2 | ||
Télécharger | [ 2SC3122 ] |
No | Description détaillée | Fabricant |
2SC3120 | TRANSISTOR (TV TUNER/ UHF MIXER/ VHF~UHF BAND RF AMPLIFIER APPLICATIONS) | Toshiba Semiconductor |
2SC3120 | Silicon NPN Epitaxial | Kexin |
2SC3121 | Silicon NPN Epitaxial Planar Type Transistor | Toshiba Semiconductor |
2SC3121 | Silicon NPN Epitaxial | Kexin |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |