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Número de pieza | 2SC4548 | |
Descripción | High-Voltage Driver Applications | |
Fabricantes | Kexin | |
Logotipo | ||
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No Preview Available ! SMD Type
Transistors
High-Voltage Driver Applications
2SC4548
Features
High Breakdown Voltage
Adoption of MBIT Process
Excellent hFE Linearlity.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Power Dissipation
Jumction temperature
Storage temperature Range
* Mounted on ceramic board (250 mm2 x 0.8 mm)
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC *
Tj
Tstg
Rating
400
400
5
200
400
1.3
150
-55 to +150
Unit
V
V
V
mA
mA
W
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Gain-Bandwidth Product
Collector Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Testconditons
ICBO VCB = 300V , IE = 0
IEBO VEB = 4V , IC = 0
V(BR)CBO IC = 10uA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10uA , IC = 0
hFE VCE = 10V , IC = 50mA
VCE(sat) IC = 50mA , IB = 5mA
VBE(sat) IC = 50mA , IB = 5mA
fT VCE = 30V , IC = 10mA
Cob VCB = 30V , IE = 0 , f = 1MHz
Cre VCB = 30V , IE = 0 , f = 1MHz
ton See Test Circuit.
toff
Min Typ Max Unit
0.1 A
0.1 A
400 V
400 V
5V
60 200
0.8 V
1V
70 MHz
5 pF
4 pF
0.25
5.0
ìs
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Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2SC4548.PDF ] |
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