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PDF AON6484 Data sheet ( Hoja de datos )
| Número de pieza | AON6484 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AON6484
100V N-Channel MOSFET
General Description
The AON6484 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
100V
12A
< 79mΩ
< 90mΩ
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±20
12.0
7.5
27
3.3
2.7
14
10
25.0
10.0
2
1.3
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
21
50
3.5
Max
25
60
5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Sep 2010
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
AON6484
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
TA=25°C
TA=100°C
30
25
20
10.0
TA=150°C
TA=125°C
15
10
5
1.0
1 10 100
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
15 10000
TA=25°C
12 1000
9 17
100 5
2
6 10
10
3
0
0 25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
1
1E-05
0.001
0.1
10 0 1000
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RθJA=60°C/W
40
0.1
0.01
0.001
1E-05
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: Sep 2010
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AON6484.PDF ] | |
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